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AM41LV320MB10IT Datasheet(PDF) 2 Page - SPANSION |
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AM41LV320MB10IT Datasheet(HTML) 2 Page - SPANSION |
2 / 67 page PRELIMINARY This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 30119 Rev: A Amendment/+1 Issue Date: June 10, 2003 Refer to AMD’s Website (www.amd.com) for the latest information. Am41LV3204M Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features ■ Power supply voltage of 2.7 to 3.3 volt ■ High Performance — Access time as fast as 100ns initial 30 ns page Flash 70 ns SRAM ■ Package — 69-Ball FBGA — 8 x 10 x 1.2 mm ■ Operating Temperature —–40 °C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 3 V for read, erase, and program operations ■ Manufactured on 0.23 µm MirrorBit process technology ■ SecSi (Secured Silicon) Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — Sixty-three 32 Kword/64-kbyte sectors — Eight 4 Kword/8-kbyte boot sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ Minimum 100,000 erase cycle guarantee per sector ■ 20-year data retention at 125 °C PERFORMANCE CHARACTERISTICS ■ High performance — 100 ns access time — 30 ns page read times — 0.5 s typical sector erase time — 15 µs typical write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates — 4-word/8-byte page read buffer — 16-word/32-byte write buffer ■ Low power consumption (typical values at 3.0 V, 5 MHz) — 30 mA typical initial Page read current; 10 mA typical intra-Page read current — 50 mA typical erase/program current — 1 µA typical standby mode current SOFTWARE & HARDWARE FEATURES ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: V ID-level method of changing code in locked sectors — WP#/ACC input: Write Protect input (WP#) protects top or bottom two sectors regardless of sector protection settings ACC (high voltage) accelerates programming time for higher throughput during system production — Hardware reset input (RESET#) resets device SRAM Features ■ Power dissipation — Operating: 30 mA maximum — Standby: 10 µA maximum ■ CE1s# and CE2s Chip Select ■ Power down features using CE1s# and CE2s ■ Data retention supply voltage: 1.5 to 3.3 volt ■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) |
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