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BUK9775-55A Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK9775-55A Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page BUK9775-55A N-channel TrenchMOS™ logic level FET Rev. 02 — 10 June 2004 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9775-55A in SOT186A (TO-220F). 2. Features s TrenchMOS™ technology s Q101 compliant s 150 °C rated s Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Table 1: Pinning - SOT186A, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT186A (TO-220F) 2 drain (d) 3 source (s) mb mounting base; isolated MBK110 1 mb 23 s d g mbb076 M3D308 |
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