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BGY65 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGY65 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Apr 09 2 Philips Semiconductors Product specification CATV amplifier module BGY65 FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier module for CATV systems operating over a frequency range of 5 to 200 MHz at a voltage supply of +24 V (DC). The device is intended as a reverse amplifier for use in two way systems. PINNING - SOT115J PIN DESCRIPTION 1 input 2 common 3 common 5+VB 7 common 8 common 9 output PIN CONFIGURATION Fig.1 Simplified outline. fpage 7 8 9 2 35 1 Side view MSA319 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 10 MHz 18 − 19 dB Itot total current consumption (DC) VB = +24 V − 215 230 mA SYMBOL PARAMETER MIN. MAX. UNIT Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb mounting base operating temperature −20 +90 °C |
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Similar Description - BGY65 |
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