This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in

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Publication Number S29CD016J-CL016J_KGD_SP

Revision A

Amendment 2

Issue Date September 20, 2006

General Description

The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.

These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two

(S29CL-J) that make them ideal for today’s demanding automotive applications.

Distinctive Characteristics

Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/

erase

110 nm Floating Gate Technology

Simultaneous Read/Write operation with zero latency

X32 Data Bus

Dual Boot Sector Configuration (top and bottom)

Flexible Sector Architecture

– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double

word, and Eight 2K Double Word sectors

Programmable Burst Interface

– Linear for 2, 4, and 8 double word burst with or without wrap around

Secured Silicon Sector that can be either factory or customer

locked

20 year data retention (typical)

Cycling Endurance: 100,000 write cycles per sector (typical)

Command set compatible with JECEC (42.4) standard

Supports Common Flash Interface (CFI)

Persistent and Password methods of Advanced Sector

Protection

Unlock Bypass program command to reduce programming

time

Write operation status bits indicate program and erase

operation completion

Hardware (WP#) protection of two outermost sectors in the

large bank

Ready/Busy (RY/BY#) output indicates data available to

system

Suspend and Resume commands for Program and Erase

Operation

Performance Characteristics

S29CD016J/S29CL016J

Known Good Die

16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only

Burst Mode, Dual Boot,

Simultaneous Read/Write Flash Memory

Supplement (Advance Information)

Read Access Times

Speed Option (MHz)

56

40

67

67

17

71

22

Current Consumption (Max values)

Continuous Burst Read @ 56 MHz

90 mA

Program

50 mA

Erase

50 mA

Standby Mode

150 µA

Typical Program and Erase Times

Double Word Programming

18 µs

Sector Erase

1.0 s