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S29CD016J0MDGH114 Datasheet(PDF) 1 Page - SPANSION |
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S29CD016J0MDGH114 Datasheet(HTML) 1 Page - SPANSION |
1 / 15 page This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice. Publication Number S29CD016J-CL016J_KGD_SP Revision A Amendment 2 Issue Date September 20, 2006 General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks. These products can operate up to 56 MHz and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V (S29CL-J) that make them ideal for today’s demanding automotive applications. Distinctive Characteristics Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/ erase 110 nm Floating Gate Technology Simultaneous Read/Write operation with zero latency X32 Data Bus Dual Boot Sector Configuration (top and bottom) Flexible Sector Architecture – CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double word, and Eight 2K Double Word sectors VersatileI/O™ control (1.65 V to VCC) Programmable Burst Interface – Linear for 2, 4, and 8 double word burst with or without wrap around Secured Silicon Sector that can be either factory or customer locked 20 year data retention (typical) Cycling Endurance: 100,000 write cycles per sector (typical) Command set compatible with JECEC (42.4) standard Supports Common Flash Interface (CFI) Persistent and Password methods of Advanced Sector Protection Unlock Bypass program command to reduce programming time Write operation status bits indicate program and erase operation completion Hardware (WP#) protection of two outermost sectors in the large bank Ready/Busy (RY/BY#) output indicates data available to system Suspend and Resume commands for Program and Erase Operation Performance Characteristics S29CD016J/S29CL016J Known Good Die 16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Supplement (Advance Information) Read Access Times Speed Option (MHz) 56 40 Max Asynch. Access Time, ns (tACC)64 67 Max Synch. Latency, ns (tIACC)64 67 Max Synch. Burst Access, ns (tBACC)10 17 Max CE# Access Time, ns (tCE)69 71 Max OE# Access time, ns (tOE)22 22 Current Consumption (Max values) Continuous Burst Read @ 56 MHz 90 mA Program 50 mA Erase 50 mA Standby Mode 150 µA Typical Program and Erase Times Double Word Programming 18 µs Sector Erase 1.0 s |
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