GLT6400L08SLI-85ST datasheet(4/10 Pages) ETC

Part #	GLT6400L08SLI-85ST

Description	Ultra Low Power 512k x 8 CMOS SRAM

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G -LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

- 4 -

DC Operating Characteristics ( 70ns Vcc=3V to 3.6V , 85ns Vcc=2.7V to 3.3V)

70

85

Parameter

Sym.

Test Conditions

Min

Max

Min

Max

Unit

Input Leakage Current

ILI VCC = Max,

Vin = Gnd to VCC

1

µA

Output Leakage

Current

ILO CE

1

=VIH

VCC = Max, VOUT = Gnd to VCC

1

µA

Operating Power

Supply Current

ICC

CE1 =V

IL ,

VIN=VIH or VIL, IOUT=0mA

3

5

mA

ICC1

CE1 =V

IL ,

IOUT = 0mA,

Min Cycle, 100% Duty

25

45

mA

Average Operating

Current

ICC2

CE1 =0.2V

IOUT = 0mA,

Cycle Time=1

µs, 100% Duty

3

mA

Standby Power Supply

Current(TTL Level)

ISB

CE1 =V

IH

0.5

0.3

mA

GLT6400L08LL

5

20

µA

Standby Power Supply

Current (CMOS Level)

ISB1

CE1

≥ VCC-

0.2V or f=0

VIN

≤ 0.2V or

VIN

≥ VCC-0.2V

GLT6400L08SL

1

5

µA

Output Low Voltage

VOL

IOL = 2 mA

0.4

V

Output High Voltage

VOH

IOH = -1 mA

2.4

V

Data Retention

Parameter

Sym.

Test Conditions

Min.

Max.

Unit

VCC for Data retention

VDR

1.0

-

V

Data Retention Current

ICCDR

-

4

µA

Chip Deselect to Data Retention Time

tCDR

0

-

ns

Operating Recovery Time

(2)

tR

CE1 ≥ V

CC -0.2V or

VIN ≥ VCC -0.2V or

VIN

≤ 0.2V

tRC

-

ns

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