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S29CD032G0MQAM110 Datasheet(PDF) 3 Page - SPANSION

Part # S29CD032G0MQAM110
Description  32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

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Publication Number S29CD-G_00
Revision B Amendment 0 Issue Date November 14, 2005
PRELIMINARY
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not
design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
S29CD-G Flash Family
S29CD032G, S29CD016G
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit)
2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/
Write Flash Memory with VersatileI/O™ featuring 170 nm
Process Technology
Data Sheet
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
User-Defined x32 Data Bus
Dual Boot Block
— Top and bottom boot sectors in the same device
Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
Manufactured on 170 nm Process Technology
Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories
Performance Characteristics
High performance read access
— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
1 million write cycles per sector typical
20 year data retention typical
VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals
Software Features
Persistent Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Package options
—80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die


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