AF4410NSL datasheet(2/6 Pages) ANACHIP

Part #	AF4410NSL

Description	N-Channel Enhancement Mode Power MOSFET

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AF4410N

N-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.1 Aug 30, 2005

2/5

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±25

V

TA=25ºC

10

ID

Continuous Drain Current (Note 1)

TA=70ºC

8

A

IDM

Pulsed Drain Current (Note 2)

50

A

Total Power Dissipation

2.5

W

PD

Linear Derating Factor

TA=25ºC

0.02

W/ºC

TSTG

Storage Temperature Range

-55 to 150

ºC

TJ

Operating Junction Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

Parameter

Maximum

Units

Rthj-amb

Thermal Resistance Junction-ambient (Note 1)

Max.

50

ºC/W

Electrical Characteristics at T

J=25ºC unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

30

-

V

∆BVDSS / ∆TJ

Breakdown Voltage Temperature

Coefficient

Reference to 25

oC,

ID=1mA

-

0.037

-

V/

oC

VGS=10V, ID=10A

-

13.5

RDS(ON)

Static Drain-Source

On-Resistance (Note 3)

VGS=4.5V, ID=5A

-

22

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=15V, ID=10A

-

20

-

S

Drain-Source Leakage Current

(TJ=25

oC)

VDS=30V, VGS=0V

-

1

IDSS

Drain-Source Leakage Current

(TJ=70

oC)

VDS=24V, VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=±25V

-

±100

nA

Qg

Total Gate Charge (Note 3)

-

13.5

-

Qgs

Gate-Source Charge

-

4

-

Qgd

Gate-Drain (“Miller”) Charge

ID=10A,

VDS=15V,

VGS=5V

-

7

-

nC

td(on)

Turn-On Delay Time (Note 3)

-

14

-

tr

Rise Time

-

16

-

td(off)

Turn-Off Delay Time

-

21

-

tf

Fall-Time

VDS=25V,

ID=1A,

RG=3.3Ω, VGS=5V

RD=25Ω

-

15

-

ns

Ciss

Input Capacitance

-

1160

-

Coss

Output Capacitance

-

240

-

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=15V,

f=1.0MHz

-

165

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VSD

Forward On Voltage (Note 3)

IS=2.1A, VGS=0V

-

1.2

V

trr

Reverse Recovery Time

-

17.1

-

ns

Qrr

Reverse Recovery Charge

IS=5A, VGS=0V,

dl/dt=100A/µs

-

12

-

nC

Note 1: Surface mounted on 1 in

2 copper pad of FR4 board, 125oC/W when mounted on Min. copper pad.

Note 2: Pulse width limited by Max. junction temperature.

Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.

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