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NAND08GW3B2BN1E Datasheet(PDF) 7 Page - STMicroelectronics

Part # NAND08GW3B2BN1E
Description  4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND08GW3B2BN1E Datasheet(HTML) 7 Page - STMicroelectronics

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NAND04GW3B2B, NAND08GW3B2A
Summary description
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Summary description
The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories
that uses NAND cell technology. The NAND04GW3B2B and NAND08GW3B2A have a
density of 4 Gbits and 8 Gbits, respectively. They operate from a 3V voltage supply. The size
of a Page is 2112 Bytes (2048 + 64 spare).
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8
Input/Output bus. This interface reduces the pin count and makes it possible to migrate to
other densities without changing the footprint.
Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of
NAND Flash devices it is strongly recommended to implement an Error Correction Code
(ECC).
The device has hardware and software security features:
A Write Protect pin is available to give a hardware protection against program and
erase operations.
A Block Locking scheme is available to provide user code and/or data protection.
The device features an open-drain Ready/Busy output that can be used to identify if the
Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output
allows the Ready/Busy pins from several memories to be connected to a single pull-up
resistor.
A Copy Back Program command is available to optimize the management of defective
blocks. When a Page Program operation fails, the data can be programmed in another page
without having to resend the data to be programmed.
The NAND04GW3B2B and NAND08GW3B2A have Cache Program and Cache Read
features which improve the program and read throughputs for large files. During Cache
Programming, the device loads the data in a Cache Register while the previous data is
transferred to the Page Buffer and programmed into the memory array. During Cache
Reading, the device loads the data in a Cache Register while the previous data is
transferred to the I/O Buffers to be read.
The device has the Chip Enable Don’t Care feature, which allows code to be directly
downloaded by a microcontroller, as Chip Enable transitions during the latency time do not
stop the read operation.
The devices have the option of a Unique Identifier (serial number), which allows each device
to be uniquely identified.
The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not
described in the datasheet. For more details of this option contact your nearest ST Sales
office.
The device is available in a TSOP48 (12 x 20mm) package. In order to meet environmental
requirements, ST offers the NAND04GW3B2B and NAND08GW3B2A in ECOPACK®
package. ECOPACK packages are Lead-free. The category of second Level Interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark.


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