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K4M51163LC-BG1L Datasheet(PDF) 3 Page - Samsung semiconductor |
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K4M51163LC-BG1L Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 12 page K4M51163LC - R(B)N/G/L/F March 2006 3 Mobile SDRAM 54Ball(6x9) FBGA 123789 A VSS DQ15 VSSQ VDDQ DQ0 VDD B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 C DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 E DQ8 NC VSS VDD LDQM DQ7 F UDQM CLK CKE CAS RAS WE G A12 A11 A9 BA0 BA1 CS H A8A7A6 A0A1 A10 J VSS A5 A4 A3 A2 VDD Pin Name Pin Function CLK System Clock CS Chip Select CKE Clock Enable A0 ~ A12 Address BA0 ~ BA1 Bank Select Address RAS Row Address Strobe CAS Column Address Strobe WE Write Enable L(U)DQM Data Input/Output Mask DQ0 ~ 15 Data Input/Output VDD/VSS Power Supply/Ground VDDQ/VSSQ Data Output Power/Ground Symbol Min Typ Max A - - 1.00 A1 0.25 - - E 11.4 11.5 11.6 E1 - 6.40 - D 9.9 10.0 10.1 D1 - 6.40 - e - 0.80 - b 0.45 0.50 0.55 z - - 0.10 [Unit:mm] Package Dimension and Pin Configuration < Top View*2 > < Bottom View*1 > #A1 Ball Origin Indicator < Top View*2 > z A A1 *2: Top View *1: Bottom View b 52 1 63 4 8 97 F E D C B J H G A E1 E |
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Similar Description - K4M51163LC-BG1L |
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