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BGY925 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BGY925
Description  UHF amplifier module
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGY925 Datasheet(HTML) 2 Page - NXP Semiconductors

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2000 Feb 02
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
FEATURES
• 26 V nominal supply voltage
• 23 W output power into a load of 50 Ω with an RF drive
power of 36 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
DESCRIPTION
The BGY925 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOSFET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.
PINNING - SOT365A
PIN
DESCRIPTION
1
RF input
2VS1
3VS2
4
RF output
Flange
ground
handbook, halfpage
MSA447
2
13
4
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb =25 °C.
Note
1. At PL =16W.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
VS1, VS2
(V)
PL
(W)
Gp
(dB)
η
(%)
(note 1)
ZS, ZL
(
Ω)
CW
920 to 960
26
23
≥28
≥30
50
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS1
DC supply voltage
28
V
VS2
DC supply voltage
28
V
PD
input drive power
80
mW
PL
load power
32
W
Tstg
storage temperature
−30
+100
°C
Tmb
operating mounting-base temperature
−10
+90
°C


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