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H7N1004LD Datasheet(PDF) 6 Page - Renesas Technology Corp |
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H7N1004LD Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 12 page  H7N1004LD, H7N1004LS, H7N1004LM Rev.6.00, Aug.27.2003, page 6 of 11 010 20 30 40 50 2000 5000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 20 50 10 V = 0 f = 1 MHz GS Ciss Coss Crss I = 30 A D VDS VGS V = 25 V 50 V 100 V DD V = 100 V 50 V 25 V DD r t d(on) t d(off) t t f V = 10 V, V = 30 V PW = 5 µs, duty ≤ 1% R = 4.7 Ω GS DD G Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage V (V) DS Dynamic Input Characteristics Switching Characteristics Gate Charge Qg (nC) Drain Current I (A) D 0.1 0.3 1 3 10 30 100 100 20 50 10 di / dt = 100 A / µs V = 0, Ta = 25 °C GS Body-Drain Diode Reverse Recovery Time Reverse Drain Current I (A) DR |
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