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BLF246 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF246 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 1996 Oct 21 5 Philips Semiconductors Product specification VHF power MOS transistor BLF246 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. VGS = 10 V; ID =5A. handbook, halfpage 050 100 200 0 MBD297 150 T ( C) o j RDSon ( Ω) 300 400 100 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. 0 200 400 600 800 010 20 30 40 C (pF) C is C os (V) VDS MRA930 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 010 20 40 300 100 0 200 MGG108 30 VDS (V) Crs (pF) |
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