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MA4E2039 Datasheet(PDF) 2 Page - Tyco Electronics

Part # MA4E2039
Description  GaAs Beam Lead Schottky Barrier Diodes
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Manufacturer  MACOM [Tyco Electronics]
Direct Link  http://www.macom.com
Logo MACOM - Tyco Electronics

MA4E2039 Datasheet(HTML) 2 Page - Tyco Electronics

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GaAs Beam Lead Schottky Barrier Diodes
MA4E2037, MA4E2039, MA4E2040
M/A-COM Division of AMP Incorporated
Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V3.001
Electrical Specifications @ T
A = +25°C
MA4E2037
MA4E2039
MA4E2040
Single
Anti-parallel
Series Tee
Symbol Parameters and Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
C
j
Junction Capacitance at 0V at 1 MHz
pF
-
.020
-
-
.020
3
--
.020
3
C
t
Total Capacitance at 0V at 1 MHz
1
pF
.040
.050
.060
0.40
3
.050
3
.060
3
.040
3
.050
3
.060
3
—C
t
Total Capacitance Difference
pF
-
-
-
-
-
-
-
.005
.010
R
s
Series Resistance at +10mA
2
Ohms
-
4
7
-
4
7
-
4
7
V
f1
Forward Voltage at +1mA
Volts
.60
.70
.80
.60
.70
.80
.60
.70
.80
—V
f
Forward Voltage Difference at 1mA
Volts
-
-
-
-
.005
.010
-
.005
.010
V
br
Reverse Breakdown Voltage at -10
µA
Volts
4.5
7
-
-
-
-
4.5
7
-
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at +10 mA.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
Handling Procedures
The following precautions should be observed to avoid damag-
ing these chips:
Cleanliness:
These devices should be handled in a clean environment. Do not
attempt to clean die after installation.
Static Sensitivity:
Schottky barrier diodes are ESD sensitive and can be damaged
by static electricity. Proper ESD techniques should be used
when handling these devices.
General Handling:
These devices have a polymer layer which provides scratch
protection for the junction area and the anode air bridge. Beam
lead devices must, however, be handled with care since the leads
may easily be distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum pencil with a #27
tip is recommended for picking and placing. A sharpened
wooden stick which has been dipped in isopropyl alcohol may
also be used as a pick and place tool.
Mounting Techniques
These devices are designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow
and conductive epoxy.
See Application Note M541, “Bonding and Handling Proce-
dures for Chip Diode Devices” for Detailed Instructions.
0.0 0
0.0 1
0.1 0
1.0 0
10.00
100.00
0.2 0
0.3 0
0.4 0
0.5 0
0.6 0
0.7 0
0.8 0
0.9 0
1.0 0
F O R W AR D V O L T A G E (V )
T = 1 2 5
o C
T = 2 5
o C
T = -5 0
o C
Typical Forward Characteristics


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