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PBSS5420D Datasheet(PDF) 11 Page - NXP Semiconductors |
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PBSS5420D Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 16 page 9397 750 14027 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 7 April 2005 11 of 16 Philips Semiconductors PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor 8. Test information Fig 13. BISS transistor switching time definition VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A Fig 14. Test circuit for switching times 006aaa266 −I Bon (100 %) −I B input pulse (idealized waveform) −I Boff 90 % 10 % −I C (100 %) −I C td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff RC R2 R1 DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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