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S29NS016JPLBJW003 Datasheet(PDF) 6 Page - SPANSION

Part # S29NS016JPLBJW003
Description  110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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S29NS016JPLBJW003 Datasheet(HTML) 6 Page - SPANSION

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2S29NS-J
S29NS-J_00_A10 March 22, 2006
Data
Sheet
General Description
The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16
Mbit 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as
8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a sin-
gle VCC of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt Acc may be
used for faster program performance if desired. These devices can also be programmed in stan-
dard EPROM programmers.
The devices are offered at the following speeds:
The devices operate within the temperature range of –25 °C to +85 °C, and are offered Very Thin
FBGA packages.
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture divides the memory space into four banks. The device
allows a host system to program or erase in one bank, then immediately and simultaneously read
from another bank, with zero latency. This releases the system from waiting for the completion
of program or erase operations.
The devices are structured as shown in the following tables:
Clock
Speed
Burst Access (ns)
Synch. Initial Access
(ns)
Asynchronous Initial
Access (ns)
Output
Loading
66 MHz
11
71
65
30 pF
54 MHz
13.5
87.5
70
S29NS128J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
4
8 Kwords
64
32 Kwords
63
32 Kwords
32 Mbits total
96 Mbits total
S29NS064J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
4
8 Kwords
32
32 Kwords
31
32 Kwords
16 Mbits total
48 Mbits total


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