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HT6256DB Datasheet(PDF) 3 Page - Honeywell Solid State Electronics Center |
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HT6256DB Datasheet(HTML) 3 Page - Honeywell Solid State Electronics Center |
3 / 8 page 3 HT6256 VDD Supply Voltage Range (2) -0.5 6.5 V VPIN Voltage on Any Pin (2) -0.5 VDD+0.5 V TSTORE Storage Temperature (Zero Bias) -65 325 °C TSOLDER Soldering Temperature (5 Seconds) 355 °C PD Maximum Power Dissipation (3) 2 W IOUT DC or Average Output Current 25 mA VPROT ESD Input Protection Voltage (4) 2000 V 28 DIP 10 Parameter Symbol Parameter Max Symbol Test Conditions Worst Case Units CAPACITANCE (1) Symbol Test Conditions Min Max Typical Units 500 µA NCS=VDD=2.5V, VI=VDD or VSS 330 µA NCS=VDD=3.0V, VI=VDD or VSS VDR Data Retention Voltage 2.5 V IDR Data Retention Current NCS=VDR VI=VDR or VSS ΘJC Thermal Resistance (Jct-to-Case) (1) This parameter is tested during initial design characterization only (2) Typical operating conditions: TA= 25 °C. RECOMMENDED OPERATING CONDITIONS Symbol Max Typ Description Parameter Min Worst Case °C/W Units VDD Supply Voltage (referenced to VSS) 4.5 5.0 5.5 V TA Ambient Temperature -55 25 225 °C VPIN Voltage on Any Pin (referenced to VSS) -0.3 VDD+0.3 V Min Typical (2) CI Input Capacitance 5 7 pF VI=VDD or VSS, f=1 MHz CO Output Capacitance 7 9 pF VIO=VDD or VSS, f=1 MHz Units Rating Min Max (1) Operating conditions: TA= -55 °C to +125°C. DATA RETENTION CHARACTERISTICS (1) Parameter ABSOLUTE MAXIMUM RATINGS (1) (1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability. (2) Voltage referenced to VSS. (3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification. (4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab. |
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