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EM25LV010-25KGBS Datasheet(PDF) 11 Page - ELAN Microelectronics Corp

Part # EM25LV010-25KGBS
Description  1 Megabit (128K x 8) Serial Flash Memory
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Manufacturer  EMC [ELAN Microelectronics Corp]
Direct Link  http://www.emc.com.tw
Logo EMC - ELAN Microelectronics Corp

EM25LV010-25KGBS Datasheet(HTML) 11 Page - ELAN Microelectronics Corp

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EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Instructions
All instructions, addresses, and data are shifted in and out of the device with the most
significant bit shifted first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S#) is driven Low. Then, the one-byte instruction code must be shifted in to the device with
the most significant bit entered first on Serial Data Input (D), and each bit being latched on the
rising edges of Serial Clock (C). The instruction set is listed in Table 7 below.
Depending on the instruction, the one-byte instruction code is followed by address bytes or
data bytes, or both, or none at all. Chip Select (S#) must be driven High after the last bit of
the instruction sequence has been shifted in.
At the end of a Page Program (PP), Block Erase (BE), Chip Erase (CE), or Write Status
Register (WRSR) instruction, Chip Select (S#) must be driven High exactly at a byte boundary.
Otherwise the instruction will be rejected and not executed. That is, Chip Select (S#) must be
driven High when the number of clock pulses after Chip Select (S#) being driven Low, is an
exact multiple of eight. All attempts to access the memory array during a Write Status
Register cycle, Program cycle, or Erase cycle are ignored, and the internal Write Status
Register cycle, Program cycle, or Erase cycle will continue ineffectively.
Instruction
Description
One-byte Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
0
0
0
WRDI
Write Disable
0000 0100
0
0
0
RDSR
Read Status Register
0000 0101
0
0
1 to
WRSR
Write Status Register
0000 0001
0
0
1
READ
Read Data Bytes
0000 0011
3
0
1 to
FAST READ
Read Data Bytes at Higher Speed
0000 1011
3
1
1 to
PP
Page Program
0000 0010
3
0
1 to 256
BE
Block Erase
1101 1000
3
0
0
CE
Chip Erase
1100 0111
0
0
0
DP
Deep Power-down
1011 1001
0
0
0
Release from Deep Power-down, and
Read Device ID
0
3
1 to
RES
Release from Deep Power-down
1010 1011
0
0
0
RDID
Read Manufacturer/Device ID
1001 0000
0
3
1 to
Table 7: Instruction Set
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 11 of 30


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