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AS4LC4M4883C Datasheet(PDF) 6 Page - Austin Semiconductor |
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AS4LC4M4883C Datasheet(HTML) 6 Page - Austin Semiconductor |
6 / 20 page 2-78 AS4LC4M4 Austin Semiconductor, Inc., reserves the right to change products or specifications without notice. Rev. 11/97 DS000022 AS4LC4M4 883C 4 MEG x 4 DRAM AUSTIN SEMICONDUCTOR, INC. CAPACITANCE PARAMETER SYMBOL MAX UNITS NOTES Input Capacitance: Address pins CI1 7pF2 Input Capacitance: ?R?A/S, ?C?A/S, ?W/E, ?O/ECI2 7pF2 Input/Output Capacitance: DQ CIO 8pF2 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Notes: 6, 7, 8, 9, 10, 11, 12, 13) (VCC = +3.3V ±0.3V) AC CHARACTERISTICS -6 -7 -8 PARAMETER SYM MIN MAX MIN MAX MIN MAX UNITS NOTES Access time from column-address tAA 30 35 40 ns Column-address set-up to ?C?A/S precharge during write tACH 15 15 20 ns Column-address hold time (referenced to ?R?A/S) tAR 45 55 60 ns Column-address setup time tASC 0 0 0 ns Row-address setup time tASR 0 0 0 ns Column-address to ?W/E delay time tAWD 55 65 65 ns 20 Access time from ?C?A/S tCAC 15 20 20 ns 14 Column-address hold time tCAH 10 15 15 ns ?C?A/S pulse width tCAS 12 10,000 15 10,000 20 10,000 ns ?C?A/S hold time (CBR REFRESH) tCHR 10 15 15 ns 5 ?C?A/S to output in Low-Z tCLZ 0 0 0 ns Data output hold after next ?C?A/S LOW tCOH 5 5 5 ns ?C?A/S precharge time tCP 10 10 10 ns 15 Access time from ?C?A/S precharge tCPA 35 40 40 ns ?C?A/S to ?R?A/S precharge time tCRP 5 5 5 ns ?C?A/S hold time tCSH 50 55 60 ns ?C?A/S setup time (CBR REFRESH) tCSR 5 5 10 ns 5 ?C?A/S to ?W/E delay time tCWD 35 40 45 ns 20 Write command to ?C?A/S lead time tCWL 15 15 20 ns Data-in hold time tDH 10 12 15 ns 21 Data-in hold time (referenced to ?R?A/S) tDHR 40 56 55 ns Data-in setup time tDS 0 0 0 ns 21 Output disable tOD 0 15015 20 ns Output Enable tOE 15 20 20 ns 22 ?O/E hold time from ?W/E during READ-MODIFY-WRITE cycle tOEH 10 12 15 ns ?O/E HIGH hold from ?C?A/S HIGH tOEHC 10 10 10 ns ?O/E HIGH pulse width tOEP 10 10 10 ns ?O/E LOW to ?C?A/S HIGH setup time tOES 5 5 5 ns |
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