March 1993

2

Philips Semiconductors

Product specification

UHF power transistor

BLV193

FEATURES

• Emitter ballasting resistors for an

optimum temperature profile

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor

intended for common emitter class-A

and class-AB operation in the

900 MHz communications band.

The transistor has a SOT171 flange

envelope with a ceramic cap. All

leads are isolated from the mounting

base.

PINNING - SOT171

PIN

DESCRIPTION

1

emitter

2

emitter

3

base

4

collector

5

emitter

6

emitter

QUICK REFERENCE DATA

Note

PIN CONFIGURATION

MODE OF

OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

(dB)

(note 1)

c.w. class-AB

900

12.5

12

≥ 6.5

≥ 50

−

c.w. class-A

900

12

6 (PEP)

typ. 11

−

typ.

−30

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

MBA931 - 1

1

3

5

2

4

6

Top view