Integrated Silicon Solution, Inc.

5

Rev. A

09/29/00

IS41LV32256

POWER-ON

wait followed by a minimum of any eight initialization

cycles containing a

current is dependent on the input levels of

RAS and CAS.

It is recommended that

surges.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Power Supply

3.0

3.3

3.6

V

Input High Voltage

2.4

—

V

Input Low Voltage

–0.5

—

0.4

V

Note:

1. Voltages are referenced to GND.

Symbol

Parameters

Rating

Unit

Ambient Temperature Under Bias

–1.0 to +80

°C

Storage Temperature

–50 to +125

°C

Voltage Relative to GND

–1.0 to +5.5

V

Data Output Current

50

mA

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Symbol

Parameter

Max.

Unit

Input Capacitance

5

pF

Data Input/Output Capacitance

7

pF

Notes:

1. Capacitance is sampled and 100% tested.