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BLV57 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLV57 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 24 page 1998 Feb 09 4 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 THERMAL RESISTANCE (dissipation = 42 W; Tmb = 80,5 °C, i.e. Th =70 °C) From junction to mounting base (d.c. dissipation) Rth j−mb(dc) = 2,43 K/W From junction to mounting base (r.f. dissipation) Rth j−mb(rf) = 1,91 K/W From mounting base to heatsink Rth mb−h = 0,25 K/W Fig.3 Power derating curves vs. temperature.(1) I Continuous d.c. (including r.f. class-A) operation II Continuous r.f. operation Dissipation of either transistor section should not exceed half rated dissipation. handbook, halfpage 050 Th (°C) 100 100 75 25 0 50 MGP359 Ptot (W) ΙΙ Ι |
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