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STAD-JUN.19.2006

PJD15N06L

FEATURES

• R

• R

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for DC/DC Converters

• Fully Characterized Avalanche Voltage and Current

• Pb free product : 99% Sn above can meet RoHS environment

substance directive request

MECHANICALDATA

• Case: TO-252 Molded Plastic

• Terminals : Solderable per MIL-STD-750D,Method 1036.3

• Marking : 15N06L

60V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

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