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FDP65N06 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDP65N06 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FDP65N06 Rev. A1 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. V GS = 0 V 2. I D = 250 µA T J , Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * Notes : 1. V GS = 10 V 2. I D = 32.5 A T J , Junction Temperature [ oC] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 DC 100ms 10ms 1ms 100 µs 10 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS , Drain-SourceVoltage[V] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 T C , Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * Notes : 1. Z θJC(t) = 0.92 0C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θJC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1 , Square Wave Pulse Duration [sec] |
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Similar Description - FDP65N06 |
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