Low Capacitance, 16- and 8-Channel

ADG1206/ADG1207

Rev. 0

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FEATURES

<1 pC charge injection over full signal range

1.5 pF off capacitance

33 V supply range

120 Ω on resistance

Fully specified at ±15 V/+12 V

3 V logic-compatible inputs

Rail-to-rail operation

Break-before-make switching action

28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP_VQ

APPLICATIONS

Audio and video routing

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Communication systems

FUNCTIONAL BLOCK DIAGRAMS

ADG1207

S1A

S8B

DA

DB

S8A

S1B

1-OF-8

DECODER

A0 A1 A2 EN

ADG1206

S1

S16

D

1-OF-16

DECODER

A0 A1 A2 A3 EN

Figure 1.

GENERAL DESCRIPTION

The ADG1206 and ADG1207 are monolithic iCMOS analog

multiplexers comprising sixteen single channels and eight

differential channels, respectively. The ADG1206 switches one

of sixteen inputs to a common output, as determined by the 4-

bit binary address lines A0, A1, A2, and A3. The ADG1207

switches one of eight differential inputs to a common

differential output, as determined by the 3-bit binary address

lines A0, A1, and A2. An EN input on both devices is used to

enable or disable the device. When disabled, all channels are

switched off. When on, each channel conducts equally well in

both directions and has an input signal range that extends to the

supplies.

The iCMOS (industrial CMOS) modular manufacturing

process combines high voltage CMOS (complementary metal-

oxide semiconductor) and bipolar technologies. It enables the

development of a wide range of high performance analog ICs

capable of 33 V operation in a footprint that no other generation

of high voltage parts has been able to achieve. Unlike analog ICs

using conventional CMOS processes, iCMOS components can

tolerate high supply voltages while providing increased perfor-

mance, dramatically lower power consumption, and reduced

package size.

The ultralow capacitance and exceptionally low charge injection

of these multiplexers make them ideal solutions for data

acquisition and sample-and-hold applications, where low glitch

and fast settling are required. Figure 2 shows that there is

minimum charge injection over the entire signal range of the

device. iCMOS construction also ensures ultralow power

dissipation, making the parts ideally suited for portable and

battery-powered instruments.

1.0

0

–15

15

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

–10

–5

0

5

10

MUX (SOURCE TO DRAIN)

Figure 2. Source-to-Drain Charge Injection vs. Source Voltage