Philips Semiconductors

Product specification

Breakover diodes

BR211 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

diodes in an axial, hermetically

sealed,

glass

envelope.

These

BR211-140 to 280

devices feature controlled breakover

V

(BO)

Breakover voltage

140

280

V

voltage and high holding current

I

H

Holding current

150

-

mA

together with high peak current

I

TSM

Non-repetitive peak current

-

40

A

handling

capability.

Typical

applications

include

transient

overvoltage

protection

in

telecommunications equipment.

OUTLINE - SOD84

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

D

Continuous voltage

-

75% of

V

V

(BO)typ

I

TSM1

Non repetitive peak current

10/320

µs impulse equivalent to

-

40

A

10/700

µs, 1.6 kV voltage impulse

(CCITT K17)

I

TSM2

Non repetitive on-state current

half sine wave; t = 10 ms;

-

15

A

T

I

t

-

1.1

A

dI

Rate of rise of on-state current

t

-

50

A/

µs

after V

P

tot

Continuous dissipation

T

-

1.2

W

P

TM

Peak dissipation

t

-

50

W

T

stg

Storage temperature

-65

150

˚C

T

a

Operating ambient temperature off-state

-

70

˚C

T

vj

Overload junction temperature

on-state

-

150

˚C

XXX denotes voltage grade

August 1996

1

Rev 1.200