DTA115EM3T5G datasheet(3/12 Pages) ONSEMI

Part #	DTA115EM3T5G

Description	Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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DTA114EM3T5G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

DTA114EM3T5G

(VEB = 6.0 V, IC = 0)

DTA124EM3T5G

DTA144EM3T5G

DTA114YM3T5G

DTA114TM3T5G

DTA143TM3T5G

DTA123EM3T5G

DTA143EM3T5G

DTA143ZM3T5G

DTA124XM3T5G

DTA123JM3T5G

DTA115EM3T5G

DTA144WM3T5G

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 3.)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS (Note 3.)

DC Current Gain

DTA114EM3T5G

(VCE = 10 V, IC = 5.0 mA)

DTA124EM3T5G

DTA144EM3T5G

DTA114YM3T5G

DTA114TM3T5G

DTA143TM3T5G

DTA123EM3T5G

DTA143EM3T5G

DTA143ZM3T5G

DTA124XM3T5G

DTA123JM3T5G

DTA115EM3T5G

DTA144WM3T5G

hFE

35

60

80

160

8.0

15

80

60

100

140

250

15

27

140

130

140

150

140

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(IC = 10 mA, IB = 5 mA) DTA123EM3T5G

(IC = 10 mA, IB = 1 mA) DTA114TM3T5G/DTA143TM3T5G/

DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5G

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

DTA114EM3T5G

DTA124EM3T5G

DTA114YM3T5G

DTA114TM3T5G

DTA143TM3T5G

DTA123EM3T5G

DTA143EM3T5G

DTA143ZM3T5G

DTA124XM3T5G

DTA123JM3T5G

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

DTA144EM3T5G

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)

DTA115EM3T5G

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

DTA144WM3T5G

VOL

−

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

DTA114TM3T5G

DTA143TM3T5G

DTA123EM3T5G

DTA143EM3T5G

VOH

4.9

−

Vdc

3. Pulse Test: Pulse Width < 300

ms, Duty Cycle < 2.0%

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DTA115EM3T5G Datasheet(PDF) 3 Page - ON Semiconductor

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