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DIM600DDM17-A000 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DIM600DDM17-A000 Datasheet(HTML) 7 Page - Dynex Semiconductor |
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7 / 10 page  DIM600DDM17-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com Fig. 10 DC current rating vs case temperature Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 400 800 1200 1600 2000 Collector-emitter voltage, Vce - (V) Tcase = 125˚C Vge = ±15V Rg(min) = 3.3Ω Module Chip 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 140 Case temperature, Tcase - (˚C) Fig. 7 Diode typical forward characteristics 0 100 200 300 400 500 600 700 800 0 400 800 1200 1600 2000 Reverse voltage, VR - (V) Tj = 125˚C 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Foward voltage, VF - (V) Tj = 25˚C Tj = 125˚C VF is measured at power busbars and not the auxiliary terminals |
Similar Part No. - DIM600DDM17-A000 |
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Similar Description - DIM600DDM17-A000 |
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