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NCP5211DR2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP5211DR2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 13 page NCP5211 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS (continued) (−40 °C < TA < 85°C; −40°C < TJ < 125°C; 4.5 V < VCC, VC < 14 V; 7.0 V < BST < 20 V; CGATE(H) = CGATE(L) = 3.3 nF; ROSC = 51 k; CCOMP = 0.1 mF, unless otherwise specified.) (Note 3) Characteristic Test Conditions Min Typ Max Unit General Electrical Specifications VCC Supply Current COMP = 0 V (no switching) − 5.0 8.0 mA BST/VC Supply Current COMP = 0 V (no switching) − 2.0 3.0 mA Start Threshold GATE(H) Switching, COMP Charging 3.90 4.05 4.20 V Stop Threshold GATE(H) Not Switching, COMP Not Charging 3.75 3.90 4.05 V Hysteresis Start−Stop 100 150 200 mV Sense Ground Current (Note 4) − 0.15 1.00 mA 3. Guaranteed by design. Not tested in production. 4. Recommended maximum operating voltage between the three grounds is 200 mV. UVLO Comparator 5.0 mA GATE(L) GATE(H) − + − + − + Σ PGND ROSC VC BST R S Q Q S R Q Q Fault Fault PWM FF COMP Discharge COMP 0.25 V PWM Comparator ART Ramp OSC ROSC 0.5 V Error Amp 1.0 V 100 % DC Comparator VSTART OC Comparator 60 mV 0.8 V UVLO LGND VCC IS− IS+ SGND VFB COMP VFFB Figure 2. Block Diagram Reset Dominant Set Dominant |
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