BSN254 datasheet(3/12 Pages) PHILIPS

Part #	BSN254

Description	N-channel enhancement mode vertical D-MOS transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 12 page

2002 Feb 19

3

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BSN254; BSN254A

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum

10

× 10 mm.

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

125

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

ID =10 µA; VGS = 0

250

−−

V

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−±100 nA

VGSth

gate-source threshold voltage

ID = 1 mA; VDS =VGS

0.8

−

2V

RDSon

drain-source on-state resistance

ID = 20 mA; VGS = 2.4 V

−−

7.5

Ω

ID = 300 mA; VGS =10V

−

2.8

5

Ω

IDSS

drain-source leakage current

VDS = 200 V; VGS =0

−−

1

µA

 Y

fs

transfer admittance

ID = 300 mA; VDS = 25 V

200

600

−

mS

Ciss

input capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

100

120

pF

Coss

output capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

21

30

pF

Crss

feedback capacitance

VDS = 25 V; VGS = 0; f = 1 MHz

−

10

15

pF

Switching times (see Figs 2 and 3)

ton

turn-on time

ID = 250 mA; VDD =50V;

VGS =0to10V

−

610

ns

toff

turn-off time

ID = 250 mA; VDD =50V;

VGS =10to0V

−

47

60

ns

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