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PH8030L Datasheet(PDF) 8 Page - NXP Semiconductors |
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PH8030L Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page PH8030L_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 8 of 12 Philips Semiconductors PH8030L N-channel TrenchMOS logic level FET Tj =25 °C and 150 °C; VGS =0V VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values VDS = 0 V; f = 1 MHz Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aab251 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1 1.2 VSD (V) IS (A) Tj = 25 °C 150 °C 003aab252 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aab253 10 2 10 3 10 4 10 -1 1 10 VGS (V) C (pF) Ciss Crss |
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