BSP100 datasheet(3/8 Pages) PHILIPS

Part #	BSP100

Description	N-channel enhancement mode TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel enhancement mode

BSP100

TrenchMOS

™ transistor

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

T

sp =

25 ˚C

-

6

A

(body diode)

I

SM

Pulsed source current (body

-

24

A

diode)

V

SD

Diode forward voltage

I

F = 1.25 A; VGS = 0 V

-

0.82

1.2

V

t

rr

Reverse recovery time

I

F = 1.25 A; -dIF/dt = 100 A/µs;

-

69

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 25 V

-

55

-

nC

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tsp)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

sp = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-sp = f(t); parameter D = tp/T

0

20

40

60

80

100

120

140

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

Tsp / C

BSP100

0.1

1

10

100

1

10

100

Drain-Source Voltage, VDS (V)

Peak Pulsed Drain Current, IDM (A)

d.c.

100 ms

10 ms

RDS(on) = VDS/ ID

1 ms

tp = 10 us

100 us

0

20

40

60

80

100

120

140

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

Tsp / C

BSP100

0.01

0.1

1

10

100

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

Pulse width, tp (s)

Peak Pulsed Drain Current, IDM (A)

single pulse

D = 0.5

0.2

0.1

0.05

0.02

tp

D = tp/T

D

P

T

February 1999

3

Rev 1.000

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