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BSP106 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BSP106 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP106 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 µA VGS = 0 60 90 − V IDSS drain-source leakage current VDS = 48 V VGS = 0 −− 1 µA VDS = 25 V VGS = 0 −− 0.5 µA ±I GSS gate-source leakage current VDS = 0 ±VGS = 15 V −− 10 nA VGS(th) gate-source threshold voltage ID = 1 mA VGS = VDS 0.8 − 3V RDS(on) drain-source on-resistance ID = 200 mA VGS = 10 V − 2.5 4 Ω Y fs transfer admittance ID = 200 mA VDS = 10 V 100 200 − mS Ciss input capacitance VDS = 10 V VGS = 0 f = 1 MHz − 25 40 pF Coss output capacitance VDS = 10 V VGS = 0 f = 1 MHz − 22 30 pF Crss feedback capacitance VDS = 10 V VGS = 0 f = 1 MHz − 610 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 200 mA VDD = 50 V VGS = 0 to 10 V − 25 ns toff turn-off time ID = 200 mA VDD = 50 V VGS = 0 to 10 − 10 15 ns |
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