NGB8204NT4 datasheet(1/8 Pages) ONSEMI

Part #	NGB8204NT4

Description	Ignition IGBT 18 Amps, 400 Volts

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 8 page

August, 2006 − Rev. 3

1

Publication Order Number:

NGB8204N/D

NGB8204N

Ignition IGBT

18 Amps, 400 Volts

N−Channel D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

• Ideal for Coil−on−Plug Applications

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

• Integrated ESD Diode Protection

• New Design Increases Unclamped Inductive Switching (UIS) Energy

Per Area

• Low Threshold Voltage to Interface Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Integrated Gate−Emitter Resistor (RGE)

• Emitter Ballasting for Short−Circuit Capability

• Pb−Free Package is Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCES

430

VDC

Collector−Gate Voltage

VCER

430

VDC

Gate−Emitter Voltage

VGE

18

VDC

Collector Current−Continuous

@ TC = 25°C − Pulsed

IC

18

50

ADC

AAC

ESD (Human Body Model)

R = 1500 W, C = 100 pF

ESD

8.0

kV

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

800

V

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

115

0.77

W

W/°C

Operating and Storage Temperature Range

TJ, Tstg

−55 to

+175

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

18 AMPS, 400 VOLTS

VCE(on) 3 2.0 V @

IC = 10 A, VGE . 4.5 V

C

E

G

D2PAK

CASE 418B

STYLE 4

Device

Package

Shipping†

ORDERING INFORMATION

NGB8204NT4

D2PAK

800 / Tape & Reel

MARKING DIAGRAM

GB

8204NG

AYWW

1

Gate

3

Emitter

4

Collector

2

Collector

GB8204N = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G= Pb−Free Package

RGE

http://onsemi.com

1

NGB8204NT4G

D2PAK

(Pb−Free)

800 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Similar Part No. - NGB8204NT4

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NGB8204NT4G	127Kb / 8P	Ignition IGBT 18 Amps, 400 Volts December, 2011 ??Rev. 4

More results

Similar Description - NGB8204NT4

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NGB8204N	127Kb / 8P	Ignition IGBT 18 Amps, 400 Volts December, 2011 ??Rev. 4
	NGD18N40CLB	152Kb / 8P	Ignition IGBT 18 Amps, 400 Volts May, 2006 ??Rev. 7
	NGB18N40CLBT4	87Kb / 8P	Ignition IGBT 18 Amps, 400 Volts May, 2006 ??Rev. 3
	NGB18N40CLB	126Kb / 8P	Ignition IGBT 18 Amps, 400 Volts December, 2011 ??Rev. 4
	NGD18N40CLBT4	70Kb / 8P	Ignition IGBT 18 Amps, 400 Volts November, 2003 ??Rev. 5
	NGD18N45CLB	105Kb / 8P	Ignition IGBT 18 Amps, 450 Volts N−Channel DPAK June, 2016 - Rev. 1
	NGD15N41CL	167Kb / 11P	Ignition IGBT 15 Amps, 410 Volts May, 2006 ??Rev. 7
	MGB15N40CL	81Kb / 12P	Ignition IGBT 15 Amps, 410 Volts April, 2002 ??Rev. 7
	NGD15N41CLT4	94Kb / 12P	Ignition IGBT 15 Amps, 410 Volts March, 2004 ??Rev. 5
Littelfuse	LGB8204ATH	472Kb / 10P	400 V, 18 A N-Channel Ignition IGBT 3/16/2020

More results

NGB8204NT4 Datasheet(PDF) 1 Page - ON Semiconductor

NGB8204NT4 Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NGB8204NT4

Similar Description - NGB8204NT4

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL