© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 6

1

Publication Order Number:

NGB8206N/D

NGB8206N

Ignition IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

Stress Applied to Load

Microprocessor Devices

Applications

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

390

V

Collector−Gate Voltage

390

V

Gate−Emitter Voltage

$15

V

Collector Current−Continuous

20

50

Continuous Gate Current

1.0

mA

Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)

20

mA

ESD (Charged−Device Model)

ESD

2.0

kV

ESD (Human Body Model)

R = 1500 W, C = 100 pF

ESD

8.0

kV

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

500

V

Derate above 25°C

150

1.0

W

W/°C

Operating & Storage Temperature Range

−55 to

+175

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

20 AMPS, 350 VOLTS

C

E

G

http://onsemi.com

CASE 418B

STYLE 4

MARKING DIAGRAM

GB

8206NG

AYWW

1

Gate

3

Emitter

4 Collector

2

Collector

GB8206N = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G= Pb−Free Package

1

Device

Package

ORDERING INFORMATION

NGB8206N

50 Units / Rail

NGB8206NG

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NGB8206NT4

800 / Tape & Reel

NGB8206NT4G

(Pb−Free)

800 / Tape & Reel