NIF5003N datasheet(2/5 Pages) ONSEMI

Part #	NIF5003N

Description	Self?뭁rotected FET with Temperature and Current Limit

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Manufacturer	ONSEMI [ON Semiconductor]

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NIF5003N

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Clamped Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C)

V(BR)DSS

42

40

46

45

51

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

0.6

2.5

5.0

−

mAdc

Gate Input Current

(VGS = 5.0 Vdc, VDS = 0 Vdc)

IGSS

−

50

125

mAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 1.2 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.7

5.0

2.2

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 4)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C)

RDS(on)

−

53

95

68

123

mW

Static Drain−to−Source On−Resistance (Note 4)

(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)

(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C)

RDS(on)

−

63

105

76

135

mW

Source−Drain Forward On Voltage

(IS = 7.0 A, VGS = 0 V)

VSD

−

0.95

1.1

V

SWITCHING CHARACTERISTICS

Turn−on Time

(Vin to 90% ID)

RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V

T(on)

−

16

20

ms

Turn−off Time

(Vin to 10% ID)

RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V

T(off)

−

80

100

ms

Slew Rate On

RL = 4.7 W,

Vin = 0 to 10 V, VDD = 12 V

−dVDS/dton

−

1.4

−

V

/ms

Slew Rate Off

RL = 4.7 W,

Vin = 10 to 0 V, VDD = 12 V

dVDS/dtoff

−

0.5

−

V

/ms

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)

Current Limit

(VGS = 5.0 Vdc)

VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)

ILIM

12

7.0

18

13

24

18

Adc

Current Limit

(VGS = 10 Vdc)

VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)

ILIM

18

13

22

18

30

25

Adc

Temperature Limit (Turn−off)

VGS = 5.0 Vdc

TLIM(off)

150

175

200

°C

Thermal Hysteresis

VGS = 5.0 Vdc

DTLIM(on)

−

15

−

°C

Temperature Limit (Turn−off)

VGS = 10 Vdc

TLIM(off)

150

165

185

°C

Thermal Hysteresis

VGS = 10 Vdc

DTLIM(on)

−

15

−

°C

Input Current during Thermal Fault

VDS = 35 V, (VGS = 5.0 V, Tj = 150°C)

Ig(fault)

0.6

−

mA

Input Current during Thermal Fault

VDS = 35 V, (VGS = 10 V, Tj = 150°C)

Ig(fault)

2.0

−

mA

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Electro−Static Discharge Capability

Human Body Model (HBM)

ESD

4000

−

V

Electro−Static Discharge Capability

Machine Model (MM)

ESD

400

−

V

4. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2%.

5. Fault conditions are viewed as beyond the normal operating range of the part.

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