NIS5102

http://onsemi.com

3

Rating

Symbol

Value

Unit

Input Voltage, Operating, Steady−State (Input + to Input −)

−0.3 to 18

V

Input Voltage, Operating, Transient (Input + to Input −), 1 second

−0.3 to 25

V

Drain Voltage, Operating, Steady−State (Drain to Input −)

−0.3 to 18

V

Drain Voltage, Operating, Transient (Drain to Input −), 1 second

−0.3 to 25

V

Drain Current, Peak

20

A

10

A

Voltage on Power Good Pin (Pin 7)

20

V

Thermal Resistance, Junction−to−Air

76.5

41.2

°C/W

°C/W

Thermal Resistance, Junction−to−Lead

3.2

°C/W

1.4

W

Operating Temperature Range (Note 1)

−40 to 175

°C

Non−Operating Temperature Range

−55 to 175

°C

Lead Temperature, Soldering (10 Sec)

235

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Actual maximum junction temperature is limited by an internal protection circuit and will not reach the absolute maximum temperature as

specified.

Characteristic

Symbol

Min

Typ

Max

Unit

POWER FET

−

2.0

−

ms

−

1.0

−

ms

−

10

13

m

W

Zero Gate Voltage Drain Current

−

−

10

mA

Zero Gate Voltage Drain Current

−

−

100

mA

−

−

−

−

pF

THERMAL LIMIT

Shutdown Temperature (Note 3)

125

135

145

°C

Hysteresis (Note 3)

−

40

−

°C

OVER/UNDERVOLTAGE

10.05

11.15

12.30

V

0.45

0.62

0.75

V

14.0

16.4

19.0

V

0.6

0.78

1.0

V

PARALLEL SHUTDOWN (Alternate Function on OVLO Pin)

Device Fan−out (Minimum External Resistor Value = 2.0 k

W (Note 3)

−

−

4.0

Devices

Shutdown Voltage Threshold (OVLO Pin)

0.6

0.8

−

V

Shutdown State Output Voltage (Isink = 2.0 mA)

−

0.3

0.4

V

2. Pulse Test: Pulse width 300

ms, duty cycle 2%.

3. Verified by design.