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NILMS4501NR2G Datasheet(PDF) 1 Page - ON Semiconductor |
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NILMS4501NR2G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 9 page © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 4 1 Publication Order Number: NILMS4501N/D NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer. Features • Current Sense MOSFET • "15% Current Mirror Accuracy • ESD Protected on the Main and the Mirror MOSFET • Low Gate Charge • Pb−Free Package is Available* Applications • DC−DC Converters • Voltage Regulator Modules • Small DC Motor Controls *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping† ORDERING INFORMATION NILMS4501NR2 PLLP4 2500/Tape & Reel PLLP4 CASE 508AA Main Drain Source Sense Gate MARKING DIAGRAM 4501N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package N−Channel with Current Mirror FET VDSS RDS(on) Typ ID MAX 24 V 12 m W @ 4.5 V 9.5 A http://onsemi.com 4501N AYWW G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. PIN CONNECTIONS Sense (1) Source (2) Gate (3) Drain (4) (Bottom View) NILMS4501NR2G PLLP4 (Pb−Free) 2500/Tape & Reel |
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