© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 4

1

Publication Order Number:

NILMS4501N/D

NILMS4501N

Power MOSFET with

Current Mirror FET

24 V, 9.5 A, N−Channel, ESD Protected,

1:250 Current Mirror, SO−8 Leadless

N−Channel MOSFET with 1:250 current mirror device utilizing the

latest ON Semiconductor technology to achieve low figure of merit

while keeping a high accuracy in the linear region. This device takes

advantage of the latest leadless QFN package to improve thermal

transfer.

Features

Applications

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

ORDERING INFORMATION

NILMS4501NR2

PLLP4

2500/Tape & Reel

PLLP4

CASE 508AA

Main

Drain

Source

Sense

Gate

MARKING

DIAGRAM

4501N = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

N−Channel with Current

Mirror FET

24 V

12 m

W @ 4.5 V

9.5 A

http://onsemi.com

4501N

AYWW

G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

PIN CONNECTIONS

Sense (1)

Source (2)

Gate (3)

Drain (4)

(Bottom View)

NILMS4501NR2G

PLLP4

(Pb−Free)

2500/Tape & Reel