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NLAS5223B Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NLAS5223B
Description  Ultra−Low 0.5 ohm Dual SPDT Analog Switch
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 3
1
Publication Order Number:
NLAS5223B/D
NLAS5223B, NLAS5223BL
Ultra−Low 0.5 W
Dual SPDT Analog Switch
The NLAS5223B is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low RON of 0.5
W, at VCC = 3.0 V.
The part also features guaranteed Break Before Make (BBM)
switching, assuring the switches never short the driver.
Features
Ultra−Low RON, t0.5 W at VCC = 3.0 V
NLAS5223B Interfaces with 2.8 V Chipset
NLAS5223BL Interfaces with 1.8 V Chipset
Single Supply Operation from 1.65−4.5 V
Full 0−VCC Signal Handling Capability
High Off−Channel Isolation
Low Standby Current, t50 nA
Low Distortion
RON Flatness of 0.15 W
High Continuous Current Capability
$300 mA Through Each Switch
Large Current Clamping Diodes at Analog Inputs
$300 mA Continuous Current Capability
Package:
1.4 x 1.8 x 0.75 mm WQFN−10 Pb−Free
1.4 x 1.8 x 0.55 mm UQFN−10 Pb−Free
These are Pb−Free Devices
Applications
Cell Phone Audio Block
Speaker and Earphone Switching
Ring−Tone Chip / Amplifier Switching
Modems
http://onsemi.com
MARKING
DIAGRAM
XXM
G
G
XX
= Specific Device Code
AD = NLAS5223BMNR2G
AE = NLAS5223BLMNR2G
AP = NLAS5223BMUR2G
M
= Date Code/Assembly Location
G
= Pb−Free Device
WQFN−10
CASE 488AQ
1
(Note: Microdot may be in either location)
1
UQFN−10
CASE 488AT
XXM
G
G
VCC
IN2
COM2
GND
8
9
10
12
NC1
NC2
NO1
76
5
4
3
NO2
IN1
COM1
FUNCTION TABLE
0
1
IN 1, 2
NO 1, 2
NC 1, 2
OFF
ON
ON
OFF
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION




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