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NSS20200LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSS20200LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NSS20200LT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −20 − − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −20 − − Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −7.0 − − Vdc Collector Cutoff Current (VCB = −20 Vdc, IE = 0) ICBO − − −0.1 mAdc Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO − − −0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE 250 250 180 150 − 300 − − − − − − Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) − − − − −0.008 −0.065 −0.100 −0.130 −0.013 −0.090 −0.120 −0.180 V Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.1 A) VBE(sat) − − −0.900 V Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) VBE(on) − − −0.900 V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT 100 − − MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 330 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 100 pF SWITCHING CHARACTERISTICS Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) td − − 60 ns Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) tr − − 120 ns Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) ts − − 300 ns Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) tf − − 130 ns 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. |
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