NTD4813NHT4G datasheet(3/8 Pages) ONSEMI

Part #	NTD4813NHT4G

Description	Power MOSFET 30 V, 40 A, Single N?묬hannel, DPAK/IPAK

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NTD4813NH

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

5.1

ns

Rise Time

tr

16.1

Turn−Off Delay Time

td(OFF)

17.2

Fall Time

tf

1.8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.95

1.2

V

TJ = 125°C

0.9

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 30 A

15

ns

Charge Time

ta

9.9

Discharge Time

tb

5.1

Reverse Recovery Charge

QRR

7.0

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

2.49

nH

Drain Inductance, DPAK

LD

0.0164

Drain Inductance, IPAK

LD

1.88

Gate Inductance

LG

3.46

Gate Resistance

RG

0.55

W

3. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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