NTD4810NH

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3.0

°C/W

Junction−to−TAB (Drain)

3.5

Junction−to−Ambient − Steady State (Note 1)

75

Junction−to−Ambient − Steady State (Note 2)

117

1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

27

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

"100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature Coefficient

5.2

mV/

°C

Drain−to−Source On Resistance

11.5 V

8.0

10

m

W

7.8

14.1

16.7

13.2

Forward Transconductance

gFS

9.0

S

CHARGES AND CAPACITANCES

Input Capacitance

1225

pF

Output Capacitance

280

Reverse Transfer Capacitance

145

Total Gate Charge

8.9

12

nC

Threshold Gate Charge

2.5

Gate−to−Source Charge

3.6

Gate−to−Drain Charge

3.9

Total Gate Charge

22.5

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

10.6

ns

Rise Time

19.2

Turn−Off Delay Time

11.7

Fall Time

3.6

Turn−On Delay Time

6.2

ns

Rise Time

18

Turn−Off Delay Time

18.5

Fall Time

2.2

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.