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NUD3160LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NUD3160LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page NUD3160 http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 60 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 200 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Pulse, Drain−to−Source (Note 3) RSOURCE = 0.5 W, T = 300 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 60 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification 2000 V THERMAL CHARACTERISTICS Symbol Rating Value Unit TA Operating Ambient Temperature −40 to 125 °C TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range −65 to 150 °C PD Total Power Dissipation (Note 4) SOT−23 Derating above 25 °C 225 1.8 mW mW/ °C PD Total Power Dissipation (Note 4) SC−74 Derating above 25 °C 380 3.0 mW mW/ °C RqJA Thermal Resistance Junction–to–Ambient (Note 4) SOT−23 SC−74 556 329 °C/W 1. Nonrepetitive current square pulse 1.0 ms duration. 2. For different square pulse durations, see Figure 12. 3. Nonrepetitive load dump pulse per Figure 3. 4. Mounted onto minimum pad board. |
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