HM514170C datasheet(6/26 Pages) HITACHI | 262,144-word x 16-bit Dynamic Random Access Memory

6 page

HM514170C, HM51S4170C Series

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to V

–1.0 to +7.0

Supply voltage relative to V

–1.0 to +7.0

Short circuit output current

Iout

Power dissipation

1.0

Operating temperature

Topr

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Recommended DC Operating Conditions (Ta = 0 to +70

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

000V

4.5

5.0

5.5

1, 2

Input high voltage

2.4

—

6.5

Input low voltage

–1.0

—

0.8

Notes: 1. All voltage referred to V

2. The supply voltage with all V

CC pins must be on the same level.

The supply voltage with all V

SS pins must be on the same level.

DC Characteristics (Ta = 0 to +70

°C, V

CC = 5 V ± 10%, VSS = 0 V)

HM514170C, HM51S4170C

-7

-8

Parameter

Symbol Min

Max

Min

Max

Unit

Test Conditions

Operating current

*1, *2

CC1

—

120

—

105

RAS, CAS cycling

RC = min

Standby current

CC2

—

TTL interface

RAS, CAS = V

Dout = High-Z

—

CMOS interface

RAS, CAS, UWE, LWE, OE

≥

CC – 0.2 V

Dout = High-Z

Standby current

(L-version)

CC2

—

200

—

200

µA

CMOS interface

RAS, CAS, OE, UWE, LWE

≥

CC – 0.2 V

Dout = High

RAS-only refresh current*2 I

CC3

—

120

—

100

RC = min

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