HM514170CJ-7 datasheet(6/26 Pages) HITACHI

Part #	HM514170CJ-7

Description	262,144-word x 16-bit Dynamic Random Access Memory

Download	26 Pages

Scroll/Zoom	100%

Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

Logo

6 / 26 page

HM514170C, HM51S4170C Series

6

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to V

SS

V

T

–1.0 to +7.0

V

Supply voltage relative to V

SS

V

CC

–1.0 to +7.0

V

Short circuit output current

Iout

50

mA

Power dissipation

P

T

1.0

W

Operating temperature

Topr

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Recommended DC Operating Conditions (Ta = 0 to +70

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

V

SS

000V

2

V

CC

4.5

5.0

5.5

V

1, 2

Input high voltage

V

IH

2.4

—

6.5

V

1

Input low voltage

V

IL

–1.0

—

0.8

V

1

Notes: 1. All voltage referred to V

SS

2. The supply voltage with all V

CC pins must be on the same level.

The supply voltage with all V

SS pins must be on the same level.

DC Characteristics (Ta = 0 to +70

°C, V

CC = 5 V ± 10%, VSS = 0 V)

HM514170C, HM51S4170C

-7

-8

Parameter

Symbol Min

Max

Min

Max

Unit

Test Conditions

Operating current

*1, *2

I

CC1

—

120

—

105

mA

RAS, CAS cycling

t

RC = min

Standby current

I

CC2

—

2

—

2

mA

TTL interface

RAS, CAS = V

IH

Dout = High-Z

—

1

—

1

mA

CMOS interface

RAS, CAS, UWE, LWE, OE

≥

V

CC – 0.2 V

Dout = High-Z

Standby current

(L-version)

I

CC2

—

200

—

200

µA

CMOS interface

RAS, CAS, OE, UWE, LWE

≥

V

CC – 0.2 V

Dout = High

RAS-only refresh current*2 I

CC3

—

120

—

100

mA

t

RC = min

Similar Part No. - HM514170CJ-7

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	HM514170D	271Kb / 33P	262,144-word x 16-bit Dynamic RAM
	HM514170DJ-6	271Kb / 33P	262,144-word x 16-bit Dynamic RAM
	HM514170DJ-7	271Kb / 33P	262,144-word x 16-bit Dynamic RAM
	HM514170DJ-8	271Kb / 33P	262,144-word x 16-bit Dynamic RAM
	HM514170DLJ-6	271Kb / 33P	262,144-word x 16-bit Dynamic RAM

More results

Similar Description - HM514170CJ-7

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	HM514260C	260Kb / 27P	262,144-word x 16-bit Dynamic Random Access Memory
Texas Instruments	SMJ4256	947Kb / 19P	[Old version datasheet] 262,144-BIT DYNAMIC RANDOM-ACCESS MEMORY
Hitachi Semiconductor	HM5118165A	1Mb / 27P	1048576-word x 16-bit Dynamic Random Access Memory
	HM5118165B	1Mb / 31P	1048576-word x 16-bit Dynamic Random Access Memory
	HM5118160B	1Mb / 27P	1048576-word x 16-bit Dynamic Random Access Memory
ACCUTEK MICROCIRCUIT CO...	AK532256AW	67Kb / 2P	262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
	AK59256AS	96Kb / 2P	262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
	AK536256W	86Kb / 2P	262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
	AK532256W	69Kb / 2P	262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
NTE Electronics	NTE21256	42Kb / 6P	262,144-Bit Dynamic Random Access Memory (DRAM)

More results

HM514170CJ-7 Datasheet(PDF) 6 Page - Hitachi Semiconductor

HM514170CJ-7 Datasheet(HTML) 6 Page - Hitachi Semiconductor

Similar Part No. - HM514170CJ-7

Similar Description - HM514170CJ-7

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

Datasheet Download

Link URL