GM71C17403CL-6 datasheet(3/10 Pages) HYNIX

Part #	GM71C17403CL-6

Description	4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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GM71C(S)17403C/CL

Rev 0.1 / Apr’01

DC Electrical Characteristics (VCC = 5.0V+/-10%, VSS = 0V, TOPR = 0 ~ 70C)

Symbol

Parameter

Note

VOH

VOL

Output Level

Output "H" Level Voltage (IOUT = -2mA)

Unit

Max

VCC

0.4

Min

2.0

0

Output Level

Output "L" Level Voltage (IOUT = 2mA)

ICC1

Operating Current

Average Power Supply Operating Current

(RAS, CAS Cycling : tRC = tRC min)

ICC2

Standby Current (TTL)

Power Supply Standby Current

(RAS, CAS = VIH, DOUT = High-Z)

ICC3

RAS Only Refresh Current

Average Power Supply Current

RAS Only Refresh Mode

(tRC = tRC min)

ICC4

ICC5

Standby Current (CMOS)

Power Supply Standby Current

(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)

1

-

ICC6

CAS-before-RAS Refresh Current

(tRC = tRC min)

ICC7

150

-

ICC8

IL(I)

10

-10

IL(O)

10

-10

Input Leakage Current

Any Input (0V<=VIN<= 6V)

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)

Note: 1. ICC depends on output load condition when the device is selected.

ICC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

4. CAS = L (<=0.2) while RAS = L (<=0.2).

5. L-version.

EDO Page Mode Current

Average Power Supply Current

EDO Page Mode

(tHPC = tHPC min)

120

-

50ns

60ns

70ns

110

100

-

2

-

100

-

50ns

60ns

70ns

90

80

-

90

-

50ns

60ns

70ns

80

70

-

V

mA

uA

-

Standby Current RAS = VIH

CAS = VIL

DOUT = Enable

5

1

mA

Battery Backup Operating Current(Standby with CBR Refresh)

(CBR refresh, tRC = 62.5us, tRAS <= 0.3us,

DOUT = High-Z, CMOS interface)

350

-

uA

4,5

uA

5

mA

1, 2

mA

2

mA

1, 3

mA

100

-

50ns

60ns

70ns

-

90

80

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