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74HCT2G17GW Datasheet(PDF) 7 Page - NXP Semiconductors |
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74HCT2G17GW Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 18 page 74HC_HCT2G17_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 October 2006 7 of 18 NXP Semiconductors 74HC2G17; 74HCT2G17 Dual non-inverting Schmitt trigger 12. Dynamic characteristics Tamb = −40 °C to +125 °C VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 - - V IO = −4.0 mA 3.7 - - V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA - - 0.1 V IO = −4.0 mA - - 0.4 V II input leakage current VI = GND or VCC; VCC = 5.5 V - - ±1.0 µA ICC supply current VI = GND or VCC; IO = 0 A; VCC = 5.5 V - - 20.0 µA ∆ICC additional supply current VI = VCC − 2.1 V; VCC = 4.5 V to 5.5 V; IO = 0 A - - 410 µA Table 8. Static characteristics for 74HCT2G17 …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) 74HC2G17 tpd propagation delay nA to nY; see Figure 5 [1] VCC = 2.0 V; CL = 50 pF - 36 115 - 140 175 ns VCC = 4.5 V; CL = 50 pF - 12 22 - 27 34 ns VCC = 6.0 V; CL = 50 pF - 10 18 - 22 28 ns tt transition time nY; see Figure 5 [2] VCC = 2.0 V; CL = 50 pF - 20 75 - 95 110 ns VCC = 4.5 V; CL = 50 pF - 7 15 - 19 22 ns VCC = 6.0 V; CL = 50 pF - 5 13 - 16 19 ns CPD power dissipation capacitance VI = GND to VCC [3] -10- - - - pF |
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