 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BSP225 Datasheet(PDF) 2 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
BSP225 Datasheet(HTML) 2 Page - NXP Semiconductors |
|
|
2 / 12 page  April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP225 FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA PIN CONFIGURATION SYMBOL PARAMETER CONDITIONS MAX. UNIT −VDS drain-source voltage 250 V −I D drain current DC value 225 mA RDS(on) drain-source on-resistance −ID = 200 mA −VGS = 10 V 15 Ω −V GS(th) gate-source threshold voltage −ID = 1 mA VGS = VDS 2.8 V Fig.1 Simplified outline and symbol. handbook, halfpage MAM121 4 12 3 Top view s d g |
Similar Part No. - BSP225 |
|
Similar Description - BSP225 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
