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BLC6G10-160 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLC6G10-160 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 9 page BLC6G10-160_6G10LS-160_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 12 May 2006 2 of 9 Philips Semiconductors BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor 2. Pinning information [1] Connected to flange 3. Ordering information 4. Limiting values Table 2: Pinning Pin Description Simplified outline Symbol BLC6G10-160 (SOT895-1) 1 drain 2 gate 3 source [1] BLC6G10LS-160 (SOT896-1) 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 Table 3: Ordering information Type number Package Name Description Version BLC6G10-160 - plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 BLC6G10LS-160 - plastic earless flanged cavity package; 2 leads SOT896-1 Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - <tbd> A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C |
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Similar Description - BLC6G10-160 |
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