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PBSS302NZ Datasheet(PDF) 7 Page - NXP Semiconductors |
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PBSS302NZ Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page PBSS302NZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 8 September 2006 7 of 14 Philips Semiconductors PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor VCE =2V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Collector current as a function of collector-emitter voltage; typical values VCE =2V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 006aaa572 400 600 200 800 1000 hFE 0 IC (mA) 10−1 104 103 1102 10 (3) (2) (1) 006aaa578 15 10 5 VCE (V) 05 4 23 1 6 8 4 2 10 12 14 IC (A) 0 20 IB (mA) = 50 45 30 35 25 40 006aaa573 0.4 0.8 1.2 VBE (V) 0 IC (mA) 10−1 104 103 1102 10 (3) (2) (1) 006aaa576 0.4 0.8 1.2 VBEsat (V) 0 IC (mA) 10−1 104 103 1102 10 (3) (2) (1) |
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