PBSS302NZ datasheet(7/14 Pages) PHILIPS

Part #	PBSS302NZ

Description	20 V, 5.8 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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7 / 14 page

PBSS302NZ_1

Product data sheet

Rev. 01 — 8 September 2006

7 of 14

Philips Semiconductors

PBSS302NZ

20 V, 5.8 A NPN low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

DC current gain as a function of collector

current; typical values

Fig 6.

Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

Base-emitter voltage as a function of collector

current; typical values

Fig 8.

Base-emitter saturation voltage as a function of

collector current; typical values

006aaa572

400

600

200

800

1000

hFE

0

IC (mA)

10−1

104

103

1102

10

(3)

(2)

(1)

006aaa578

15

10

5

VCE (V)

05

4

23

1

6

8

4

2

10

12

14

IC

(A)

0

20

IB (mA) = 50

45

30

35

25

40

006aaa573

0.4

0.8

1.2

VBE

(V)

0

IC (mA)

10−1

104

103

1102

10

(3)

(2)

(1)

006aaa576

0.4

0.8

1.2

VBEsat

(V)

0

IC (mA)

10−1

104

103

1102

10

(3)

(2)

(1)

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