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PBSS9110X Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS9110X Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page 9397 750 14765 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 May 2005 5 of 15 Philips Semiconductors PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa411 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 duty cycle = 006aaa410 10 1 102 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 duty cycle = |
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